Difference between revisions of "Team:NAU-CHINA/Overview"

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1) Signal detection
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We use synthetic Notch (synNotch) as our signal detection receptor of the engineered T cell. When the recognition domain binds to its target antigen, it will release the effector domain (ED) and the ED is TEV protease.  
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<li>Signal detection
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<p>We use synthetic Notch (synNotch) as our signal detection receptor of the engineered T cell. When the recognition domain binds to its target antigen, it will release the effector domain (ED) and the ED is TEV protease. </p>
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2) Signal processing
 
2) Signal processing
 
First, we want to convert the analog signal outside the cell into a digital signal inside the cell. We use Tet operator (TetO) to achieve this goal. This part contains TetO, TEV protease from the ED of synNotch and Tet repressor (TetR) from 2017 Oxford University iGEM project. To use these elements, we can initially implement the filtering function but also has leakage because of TetO and TetR.
 
First, we want to convert the analog signal outside the cell into a digital signal inside the cell. We use Tet operator (TetO) to achieve this goal. This part contains TetO, TEV protease from the ED of synNotch and Tet repressor (TetR) from 2017 Oxford University iGEM project. To use these elements, we can initially implement the filtering function but also has leakage because of TetO and TetR.
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5)    The relationship between electronic Mosfet and our Mosfet<br>
 
5)    The relationship between electronic Mosfet and our Mosfet<br>
 
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Revision as of 05:37, 3 October 2018

Template:2018_NAU-CHINA

header
  1. What is Mosfet?
    • The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.
      The MOSFET is by far the most common transistor in digital circuits, as millions may be included in a memory chip or microprocessor.
      • Why are our cells also called Mosfet?
        • Inspired by electronic Mosfet, we designed our project, Monitoring and Operating System Founded on Engineered T cells,and it is very similar to Mosfet in many ways. Our Mosfet can be divided into two systems, signal detection system and signal response system.
          1. Signal detection

            We use synthetic Notch (synNotch) as our signal detection receptor of the engineered T cell. When the recognition domain binds to its target antigen, it will release the effector domain (ED) and the ED is TEV protease.

          2. 2) Signal processing First, we want to convert the analog signal outside the cell into a digital signal inside the cell. We use Tet operator (TetO) to achieve this goal. This part contains TetO, TEV protease from the ED of synNotch and Tet repressor (TetR) from 2017 Oxford University iGEM project. To use these elements, we can initially implement the filtering function but also has leakage because of TetO and TetR. Second, to solve the leakage problem, we introduced a recombinase into the system. The recombinase is capable of flipping the 5' end to the 3' of the target sequence containing the specific site, thereby achieving the zero one switch strictly. 3) Signal output Finally, we achieved equal outputs by using different strength promoters and different effects of recombinases. Because the promoter located at downstream of TetO and upstream of recombinases, the function is self-evident (if you want to see more, you can click here). 4) Reset When the external signal disappears or falls below the threshold, our mosfet has a reset function, which is to restore the initial state. This function is achieved by a protein called a recombination directionality factor (RDF). 5) The relationship between electronic Mosfet and our Mosfet